17/7/08 db91041 0.26 0.5 7.0 6.0 1.2 7.62 3.0 13 max 3.35 4.0 3.0 2.54 7.62 6.62 0.5 h11a1x, h11a2x, h11a3x, h11a4x, h11a5x h11a1, h11a2, h11a3, h11a4, h11a5 optically coupled isolator phototransistor output 1 34 6 25 approvals z ul recognised, file no. e91231 package code " gg " 'x' specification approvals z vde 0884 in 3 available lead form : - - std - g form - smd approved to cecc 00802 z h11a1-4 certified to en60950 by :- nemko - certificate no. p01102464 description the h11a series of optically coupled isolators consist of infrared light emitting diode and npn silicon photo transistor in a standard 6 pin dual in line plastic package. features z options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. z high isolation voltage (5.3kv rms ,7.5kv pk ) z all electrical parameters 100% tested z custom electrical selections available applications z dc motor controllers z industrial systems controllers z measuring instruments z signal transmission between systems of different potentials and impedances option g 7.62 surface mount option sm 10.16 0.26 isocom components 2004 ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, ts25 1ud england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 10.46 9.86 0.6 0.1 1.25 0.75 dimensions in mm absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse voltage 6v power dissipation 105mw output transistor collector-emitter voltage bv ceo 30v collector-base voltage bv cbo 70v emitter-collector voltage bv eco 6v collector current 50ma power dissipation 160mw power dissipation total power dissipation 200mw (derate linearly 2.67mw/ c above 25c)
db91041m-aas/a3 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.5 v i f = 10ma reverse current (i r )10 av r = 6v output collector-emitter breakdown (bv ceo )30 v i c = 1ma ( note 2 ) collector-base breakdown (bv cbo )70 v i c = 100 a emitter-collector breakdown (bv eco ) 6 v i e = 100 a collector-emitter dark current (i ceo )50nav ce = 10v coupled current transfer ratio (ctr) h11a1 50 % 10ma i f , 10v v ce h11a2 20 % 10ma i f , 10v v ce h11a3 20 % 10ma i f , 10v v ce h11a4 10 % 10ma i f , 10v v ce h11a5 30 % 10ma i f , 10v v ce collector-emitter saturation voltagev ce(sat) 0.4 v 10ma i f , 0.5ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 v io = 500v (note 1) output rise time tr 2 sv cc = 5v , i f = 10ma output fall time tf 2 sr l = 75 fig 1 note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 17/7/08 electrical characteristics ( t a = 25c unless otherwise noted ) output output r l input 10% 90% 90% 10% t on t r fig 1 v cc t off t f
db91041m-aas/a3 17/7/08 50 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 100 forward current i f (ma) 70 80 -30 0 25 50 75 100 125 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 v ce = 10v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma) 1 2 5 10 20 50 0 1.2 1.6 2.0 2.4 2.8 v ce = 0.5v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma) 0.8 0.4 0 0.5 1.0 1.5 i f = 10ma v ce = 10v relative current transfer ratio vs. ambient temperature relative current transfer ratio ambient temperature t a ( c ) -30 0 25 50 75 100 -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 i f = 10ma i c = 0.5ma
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